Photologic짰 Slotted Optical Switch ?쏻ide Gap??Series

Description: The OPB900- OPB913series of Photologic® Integrated Circuit Switches provide optimum flexibility for the design engineer. Building from a standard housing with a 0.375” (9.5mm) wide slot, a user can specify the type and polarity of the TTL output and the type of shell material. Elect

Photologic slotted optical switch \\

•0.375” (9.5 mm) wide gap\n• Choice of logical output configurations\n• Choice of opaque or IR transmissive housing material\n• Choice of PCBoard or 26 AWG, UL rated wire\n• Data rates to 250 kBaud;

Photologic Slotted Optical Switches Types OPB900L,OPB910L

Description The OPB900L and OPB910L series of Photologic® Photo Integrated Circuit Switches provide optimum flexibility for the design engineer. Building from a standard housing with a 0.375 (9.53 mm) wide solt, the user can specify (1) type and polarity of TTL output and (2) discrete shell mater

Photologic Slotted Optical Switches

Description The OPB900W and OPB910W series of Photologic® Photo Integrated Circuit Switches provide optimum flexibility for the design engineer. Building from a standard housing with a 0.375 (9.53mm) wide slot, the usre can specify (1) type and polarity of TTL output and (2) discrete shell materi

Slotted Switch, T Package

Slotted Optical Switch Wide Gap Series

文件：633.75 Kbytes Page：4 Pages

Slotted Optical Switch Wide Gap Series

文件：633.75 Kbytes Page：4 Pages

封装/外壳：模块，预接线 包装：散装 描述：SENSOR OPTICAL 9.53MM MOD WIRE 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 逻辑输出

封装/外壳：模块，预接线 包装：散装 描述：SENSOR OPTICAL 9.53MM MOD WIRE 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 逻辑输出

Slotted Switch, T Package

VHF variable capacitance diode

DESCRIPTION The BB910 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.5; ratio:

POWER TRANSISTORS(15A,90W)

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. ■ STMicroelectronics PREFERRED SALESTYPES

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain

Variable gain RF predriver amplifier

DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50). The SA910 integrates power detection and