Photologic Reflective Object Sensors

Description The OPB760N series of reflective assemblies feature Photologic® output. This electrical output can be specified as either TTL Totem Pole or TTL Open Collector. Either may be supplied with inverter or buffer output polarity. All have the added stability of a built-in hysteresis ampli

包装：散装 描述：SENSOR REFLECTVE 5.58MM NPN OPEN 传感器，变送器 光学传感器 - 光电，工业

Photologic Reflective Object Sensor

Description: The OPB760N, OPB760T, OPB770N and OPB770T series of reflecƟve assemblies feature Photologic® output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. OPB760N and OPB760T se

Photologic® Reflective Object Sensor

Description: The OPB760N, OPB760T and OPB770T series of reflective assemblies feature Photologic® output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. Features: • Choice of mountin

包装：散装 描述：SENSOR REFLECTVE 5.58MM NPN OPEN 传感器，变送器 光学传感器 - 光电，工业

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 5000 V Mean forward current 3680 A Surge current 50 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3680 A Surge current 50 kA

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1730 A Surge current 28 kA

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN771 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology Thi

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

DESCRIPTION The VN771P is a device formed by three monolithic chips housed in a standard SO28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower technology. This device is suitable to drive a DC motor in