REFLECTIVE OBJECT SENSOR

Description The OPB701 series consist of an infrared emitting diode and a NPN silicon photodarlington mounted side-by-side on converging optical axes, in a black plastic housing. The photodarlington responds to radiation from the emitter only when a reflective object passes within its field of vi

封装/外壳：模块，预接线 包装：盒 描述：SNSR OPTO TRANS 5.08MM REFL C-MT 传感器，变送器 光学传感器 - 反射式 - 模拟输出

Reflective Object Sensor

Description: OPB700 and OPB700ALZ sensors consist of an infrared emitting diode and a NPN silicon phototransistor, mounted side-by-side on converging optical axes in a black plastic housing. OPB701 and OPB701ALZ sensors consist of an infrared emitting diode and a NPN silicon photodarlington, mou

封装/外壳：模块，预接线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SNSR OPTO TRANS 5.08MM REFL C-MT 传感器，变送器 光学传感器 - 反射式 - 模拟输出

Reflective Switch

Reflective Object Sensor

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70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, hig

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

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LOW-POWER TINY SINGLE C-MOS OPERATIONAL AMPLIFIER?

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LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

文件：264.28 Kbytes Page：9 Pages