丝印代码：OPA4314；OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

丝印代码：OPA4314；OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

丝印代码：OPA4314；OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

丝印代码：OPA4314；OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

丝印代码：OPA4314；OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

丝印代码：OPA4314；OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

OPAx314-Q1 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade : –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 2 – Device CDM Classification Level C6 • Low IQ: 150 μA/ch • Wide Supply R

Quad, 5.5-V, 3-MHz, low noise (4.6-nV/√Hz), RRIO operational amplifier

3-MHz, Low-Power, Low-Noise, RRI/O, 1.8-V CMOS OPERATIONAL AMPLIFIER

文件：1.4007 Mbytes Page：31 Pages

3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

文件：1.69114 Mbytes Page：38 Pages

3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

文件：1.86396 Mbytes Page：36 Pages

3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

文件：1.783 Mbytes Page：36 Pages

OPAx314-Q1 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade : –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 2 – Device CDM Classification Level C6 • Low IQ: 150 μA/ch • Wide Supply R

OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

Operational Amplifier

文件：2.03409 Mbytes Page：45 Pages

3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

文件：1.783 Mbytes Page：36 Pages

3-MHz, Low-Power, Low-Noise, RRI/O, 1.8-V CMOS OPERATIONAL AMPLIFIER

文件：1.4007 Mbytes Page：31 Pages

3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

文件：1.783 Mbytes Page：36 Pages

Operational Amplifier

文件：2.03409 Mbytes Page：45 Pages

3-MHz, Low-Power, Low-Noise, RRI/O, 1.8-V CMOS OPERATIONAL AMPLIFIER

文件：1.4007 Mbytes Page：31 Pages

3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

文件：1.86396 Mbytes Page：36 Pages

3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

文件：1.69114 Mbytes Page：38 Pages

3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

文件：1.69114 Mbytes Page：38 Pages

Automotive-grade, quad, 5.5-V, 3-MHz, low noise (4.6-nV/√Hz), RRIO operational amplifier

PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=47KΩ) • Complement to FJN3314R

QUAD T1/E1 LINE INTERFACE DEVICE

FEATURES • Integrates four duplex DSX-1 or CEPT E1 compatible line interface circuits in a single monolithic device. Line format is selected on a per-device basis. • Provides clock recovery and line performance monitoring in the receivers. • Provides jitter attenuation and programmable line

QUAD T1/E1 LINE INTERFACE DEVICE

FEATURES • Integrates four duplex DSX-1 or CEPT E1 compatible line interface circuits in a single monolithic device. Line format is selected on a per-device basis. • Provides clock recovery and line performance monitoring in the receivers. • Provides jitter attenuation and programmable line

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half