丝印代码：OAZI；Low-Noise, 900kHz, RRIO, Precision OPERATIONAL AMPLIFIER Zerø-Drift Series

1FEATURES 23• LOW NOISE – 0.4μVPP, 0.1Hz to 10Hz – 20nV/√Hz at 1kHz • ZERØ-DRIFT SERIES – LOW OFFSET VOLTAGE: 20μV – LOW OFFSET DRIFT: 0.1μV/°C • QUIESCENT CURRENT: 125μA • GAIN BANDWIDTH: 900kHz • RAIL-TO-RAIL INPUT/OUTPUT • EMI FILTERING • SUPPLY VOLTAGE: 2.2V to 5.5V • microSIZE PAC

Low-Noise, 900kHz, RRIO, Precision OPERATIONAL AMPLIFIER Zerø-Drift Series

1FEATURES 23• LOW NOISE – 0.4μVPP, 0.1Hz to 10Hz – 20nV/√Hz at 1kHz • ZERØ-DRIFT SERIES – LOW OFFSET VOLTAGE: 20μV – LOW OFFSET DRIFT: 0.1μV/°C • QUIESCENT CURRENT: 125μA • GAIN BANDWIDTH: 900kHz • RAIL-TO-RAIL INPUT/OUTPUT • EMI FILTERING • SUPPLY VOLTAGE: 2.2V to 5.5V • microSIZE PAC

Low Noise, 900kHz, 50mV, Rail-to-Rail Input/Output Precision OPERATIONAL AMPLIFIER Zer첩-Drift Series

文件：354.34 Kbytes Page：14 Pages

Low-Noise, 900kHz, RRIO, Precision OPERATIONAL AMPLIFIER Zer첩-Drift Series

文件：980.83 Kbytes Page：24 Pages

Low-Noise, 900kHz, RRIO, Precision OPERATIONAL AMPLIFIER Zer첩-Drift Series

文件：792.91 Kbytes Page：27 Pages

丝印代码：OAZI；Low-Noise, 900kHz, RRIO, Precision OPERATIONAL AMPLIFIER Zerø-Drift Series

1FEATURES 23• LOW NOISE – 0.4μVPP, 0.1Hz to 10Hz – 20nV/√Hz at 1kHz • ZERØ-DRIFT SERIES – LOW OFFSET VOLTAGE: 20μV – LOW OFFSET DRIFT: 0.1μV/°C • QUIESCENT CURRENT: 125μA • GAIN BANDWIDTH: 900kHz • RAIL-TO-RAIL INPUT/OUTPUT • EMI FILTERING • SUPPLY VOLTAGE: 2.2V to 5.5V • microSIZE PAC

Low-Noise, 900kHz, RRIO, Precision OPERATIONAL AMPLIFIER Zerø-Drift Series

1FEATURES 23• LOW NOISE – 0.4μVPP, 0.1Hz to 10Hz – 20nV/√Hz at 1kHz • ZERØ-DRIFT SERIES – LOW OFFSET VOLTAGE: 20μV – LOW OFFSET DRIFT: 0.1μV/°C • QUIESCENT CURRENT: 125μA • GAIN BANDWIDTH: 900kHz • RAIL-TO-RAIL INPUT/OUTPUT • EMI FILTERING • SUPPLY VOLTAGE: 2.2V to 5.5V • microSIZE PAC

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES • High power gain • Easy power contr

SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)

HIGH SPEED SWITCHING. FEATURES • Low Forward Voltage : VF=0.24(Typ.) IF=5mA

SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)

HIGH SPEED SWITCHING. FEATURES • Low Forward Voltage : VF=0.24(Typ.) IF=5mA

High-Voltage, Fault-Protected Analog Multiplexers

General Description The MAX378 8-channel single-ended (1-of-8) multiplexer and the MAX379 4-channel differential (2-of-8) multiplexer use a series N-channel/P-channel/N-channel structure to provide significant fault protection. If the power supplies to the MAX378/MAX379 are inadvertently turned o

Silicon Complementary Transistors Power Amp Driver, Output, Switch

Description: The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Featur