OPAx325 Precision, 10-MHz, Low-Noise, Low-Power, RRIO, CMOS Operational Amplifiers

1 Features 1• Precision with zero-crossover distortion: – Low offset voltage: 150 μV (maximum) – High CMRR: 114 dB – Rail-to-rail I/O • Wide bandwidth: 10 MHz • Quiescent current: 650 μA/ch • Single-supply voltage range: 2.2 V to 5.5 V • Low input bias current: 0.2 pA • Low noise: 9 nV/√H

低噪声 (10nV/rtHz)、高带宽 (10MHz)、低功耗 (0.65mA)、零交叉运算放大器

OPA325、OPA2325 和 OPA4325 (OPAx325) 是精密的低压互补金属氧化物半导体 (CMOS) 运算放大器，经优化后具有极低噪声和高带宽，静态工作电流仅为 650µA。\n\nOPAx325 具有零交叉失真的线性输入级，能够在整个输入范围内提供 114dB（典型值）的出色共模抑制比 (CMRR)。共模输入范围将正负电源电压分别扩展了 100mV。输出电压摆幅通常在 10mV 电源轨内。\n\nOPAx325 同时拥有零交叉失真、高带宽 (10MHz)、高压摆率 (5V/µs) 和低噪声 (9nV/√Hz) 等优秀特性，堪称一款非常出色的逐次逼近寄存器 (SAR) 模数转换 • 零交叉失真时的精度： \n• 低失调电压：150µV（最大值）\n• 高共模抑制比 (CMRR)：114dB\n• 轨至轨 I/O\n \n• 高带宽：10MHz\n• 静态电流：650µA/每通道\n• 单电源电压范围：2.2V 至 5.5V\n• 低输入偏置电流：0.2pA \n• 低噪声：10kHz 时为 9nV/√Hz\n• 压摆率：5V/µs\n• 单位增益稳定;

Precision, 10-MHz, Low-Noise, Low-Power, RRIO, CMOS Operational Amplifiers

文件：3.1034 Mbytes Page：42 Pages

OPAx325 Precision, 10-MHz, Low-Noise, Low-Power, RRIO, CMOS Operational Amplifiers

1 Features 1• Precision with zero-crossover distortion: – Low offset voltage: 150 μV (maximum) – High CMRR: 114 dB – Rail-to-rail I/O • Wide bandwidth: 10 MHz • Quiescent current: 650 μA/ch • Single-supply voltage range: 2.2 V to 5.5 V • Low input bias current: 0.2 pA • Low noise: 9 nV/√H

OPAx325 Precision, 10-MHz, Low-Noise, Low-Power, RRIO, CMOS Operational Amplifiers

1 Features 1• Precision with zero-crossover distortion: – Low offset voltage: 150 μV (maximum) – High CMRR: 114 dB – Rail-to-rail I/O • Wide bandwidth: 10 MHz • Quiescent current: 650 μA/ch • Single-supply voltage range: 2.2 V to 5.5 V • Low input bias current: 0.2 pA • Low noise: 9 nV/√H

OPAx325 Precision, 10-MHz, Low-Noise, Low-Power, RRIO, CMOS Operational Amplifiers

1 Features 1• Precision with zero-crossover distortion: – Low offset voltage: 150 μV (maximum) – High CMRR: 114 dB – Rail-to-rail I/O • Wide bandwidth: 10 MHz • Quiescent current: 650 μA/ch • Single-supply voltage range: 2.2 V to 5.5 V • Low input bias current: 0.2 pA • Low noise: 9 nV/√H

OPAx325 Precision, 10-MHz, Low-Noise, Low-Power, RRIO, CMOS Operational Amplifiers

1 Features 1• Precision with zero-crossover distortion: – Low offset voltage: 150 μV (maximum) – High CMRR: 114 dB – Rail-to-rail I/O • Wide bandwidth: 10 MHz • Quiescent current: 650 μA/ch • Single-supply voltage range: 2.2 V to 5.5 V • Low input bias current: 0.2 pA • Low noise: 9 nV/√H

OPAx325 Precision, 10-MHz, Low-Noise, Low-Power, RRIO, CMOS Operational Amplifiers

1 Features 1• Precision with zero-crossover distortion: – Low offset voltage: 150 μV (maximum) – High CMRR: 114 dB – Rail-to-rail I/O • Wide bandwidth: 10 MHz • Quiescent current: 650 μA/ch • Single-supply voltage range: 2.2 V to 5.5 V • Low input bias current: 0.2 pA • Low noise: 9 nV/√H

OPAx325 Precision, 10-MHz, Low-Noise, Low-Power, RRIO, CMOS Operational Amplifiers

1 Features 1• Precision with zero-crossover distortion: – Low offset voltage: 150 μV (maximum) – High CMRR: 114 dB – Rail-to-rail I/O • Wide bandwidth: 10 MHz • Quiescent current: 650 μA/ch • Single-supply voltage range: 2.2 V to 5.5 V • Low input bias current: 0.2 pA • Low noise: 9 nV/√H

丝印代码：1UEV；Precision, 10-MHz, Low-Noise, Low-Power, RRIO, CMOS Operational Amplifiers

文件：3.1034 Mbytes Page：42 Pages

丝印代码：1UEV；Precision, 10-MHz, Low-Noise, Low-Power, RRIO, CMOS Operational Amplifiers

文件：3.1034 Mbytes Page：42 Pages

Silicon NPN RF Power Transistor 50W @ 30MHz

Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency =

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR325CTD series is supplied in the SOT428 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse surge ca

Dual Voltage Regulator

文件：222.23 Kbytes Page：8 Pages

Dual Voltage Regulator

文件：222.23 Kbytes Page：8 Pages

BROADBAND RF POWER TRANSISTOR NPN SILICON

文件：95.63 Kbytes Page：6 Pages