丝印代码：RAD；OPAx322x 20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Operational Amplifier With Shutdown

1 Features 1• Gain Bandwidth: 20 MHz • Low Noise: 8.5 nV√Hz at 1 kHz • Slew Rate: 10 V/μs • Low THD+N: 0.0005% • Rail-to-Rail I/O • Offset Voltage: 2 mV (maximum) • Supply Voltage: 1.8 V to 5.5 V • Supply Current: 1.5 mA/ch – Shutdown: 0.1 μA/ch • Unity-Gain Stable • Small Packages:

20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Operational Amplifier with Shutdown

文件：1.06757 Mbytes Page：29 Pages

20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Operational Amplifier with Shutdown

文件：1.43015 Mbytes Page：34 Pages

CMOS Operational Amplifier with Shutdown

文件：1.92589 Mbytes Page：38 Pages

丝印代码：RAD；OPAx322x 20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Operational Amplifier With Shutdown

1 Features 1• Gain Bandwidth: 20 MHz • Low Noise: 8.5 nV√Hz at 1 kHz • Slew Rate: 10 V/μs • Low THD+N: 0.0005% • Rail-to-Rail I/O • Offset Voltage: 2 mV (maximum) • Supply Voltage: 1.8 V to 5.5 V • Supply Current: 1.5 mA/ch – Shutdown: 0.1 μA/ch • Unity-Gain Stable • Small Packages:

丝印代码：RAD；OPAx322x 20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Operational Amplifier With Shutdown

1 Features 1• Gain Bandwidth: 20 MHz • Low Noise: 8.5 nV√Hz at 1 kHz • Slew Rate: 10 V/μs • Low THD+N: 0.0005% • Rail-to-Rail I/O • Offset Voltage: 2 mV (maximum) • Supply Voltage: 1.8 V to 5.5 V • Supply Current: 1.5 mA/ch – Shutdown: 0.1 μA/ch • Unity-Gain Stable • Small Packages:

丝印代码：RAD；OPAx322x 20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Operational Amplifier With Shutdown

1 Features 1• Gain Bandwidth: 20 MHz • Low Noise: 8.5 nV√Hz at 1 kHz • Slew Rate: 10 V/μs • Low THD+N: 0.0005% • Rail-to-Rail I/O • Offset Voltage: 2 mV (maximum) • Supply Voltage: 1.8 V to 5.5 V • Supply Current: 1.5 mA/ch – Shutdown: 0.1 μA/ch • Unity-Gain Stable • Small Packages:

丝印代码：RAD；OPAx322x 20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Operational Amplifier With Shutdown

1 Features 1• Gain Bandwidth: 20 MHz • Low Noise: 8.5 nV√Hz at 1 kHz • Slew Rate: 10 V/μs • Low THD+N: 0.0005% • Rail-to-Rail I/O • Offset Voltage: 2 mV (maximum) • Supply Voltage: 1.8 V to 5.5 V • Supply Current: 1.5 mA/ch – Shutdown: 0.1 μA/ch • Unity-Gain Stable • Small Packages:

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 1600 V Mean forward current 740 A Surge current 11 kA

Silicon NPN Transistor RF Power Output

Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: ● Output Powe

0.3 inch ( 7.62 mm ) DUAL DIGIT NUMERIC LED DISPLAYS

DESCRIPTION The UVD-322/323 is 0.3 inch ( 7.62 mm ) height dual digit display. Choices of five colors-high efficiency red/bright red/green/yellow/red orange. High efficirncy red display has red face and red segment. Bringht red ,green, yellen and red orange displays have black face and white s

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2.0 mm Series

文件：31.43 Kbytes Page：1 Pages