丝印代码：NSS；OPAx277 High-Precision Operational Amplifiers

1 Features • Ultra-low offset voltage: 10 μV • Ultra-low drift: ±0.1 μV/°C • High open-loop gain: 134 dB • High common-mode rejection: 140 dB • High power-supply rejection: 130 dB • Low bias current: 1-nA maximum • Wide supply range: ±2 V to ±18 V • Low quiescent current: 800 μA/amplifier

High Precision OPERATIONAL AMPLIFIERS

文件：921.49 Kbytes Page：25 Pages

丝印代码：NSS；OPAx277 High-Precision Operational Amplifiers

1 Features • Ultra-low offset voltage: 10 μV • Ultra-low drift: ±0.1 μV/°C • High open-loop gain: 134 dB • High common-mode rejection: 140 dB • High power-supply rejection: 130 dB • Low bias current: 1-nA maximum • Wide supply range: ±2 V to ±18 V • Low quiescent current: 800 μA/amplifier

High Precision OPERATIONAL AMPLIFIERS

文件：921.49 Kbytes Page：25 Pages

Band-switching diode

DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523 (SC-79) SMD package. FEATURES • Small plastic SMD package • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.2 pF • Low diode forward resist

Round Type

Round Type φ 3.0 mm Series

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series are designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectroni

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文件：30.91 Kbytes Page：1 Pages

Round Type

文件：30.41 Kbytes Page：1 Pages