丝印代码：OPA2333SJD；OPA2333-HT 1.8-V Micropower CMOS Operational Amplifier Zero-Drift Series

1 Features 1• Low Offset Voltage: 26 μV (Maximum) • 0.01-Hz to 10-Hz Noise: 1.5 μVPP • Quiescent Current: 50 μA • Single-Supply Operation • Supply Voltage: 1.8 V to 5.5 V • Rail-to-Rail Input and Output • Supports Extreme Temperature Applications • Controlled Baseline • One Assembly/Test

丝印代码：OPA2333SJD；OPA2333-HT 1.8-V Micropower CMOS Operational Amplifier Zero-Drift Series

1 Features 1• Low Offset Voltage: 26 μV (Maximum) • 0.01-Hz to 10-Hz Noise: 1.5 μVPP • Quiescent Current: 50 μA • Single-Supply Operation • Supply Voltage: 1.8 V to 5.5 V • Rail-to-Rail Input and Output • Supports Extreme Temperature Applications • Controlled Baseline • One Assembly/Test

1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES

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High Speed Switching Application

High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

丝印代码：E3***；P-Channel 12-V (D-S) MOSFET

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