丝印代码：2333EP；1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIERS ZERO-DRIFT SERIES

1FEATURES · Low Offset Voltage: 23 mV (Max) · 0.01-Hz to 10-Hz Noise: 1.1 mVPP · Quiescent Current: 17 mA · Single-Supply Operation · Supply Voltage: 1.8 V to 5.5 V · Rail-to-Rail Input/Output · MicroSize Packages: SC70 and SOT23 APPLICATIONS · Transducer Applications · Temperature Mea

1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIERS ZERO-DRIFT SERIES

文件：610.52 Kbytes Page：19 Pages

1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIERS ZERO-DRIFT SERIES

文件：575.87 Kbytes Page：19 Pages

丝印代码：2333EP；1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIERS ZERO-DRIFT SERIES

1FEATURES · Low Offset Voltage: 23 mV (Max) · 0.01-Hz to 10-Hz Noise: 1.1 mVPP · Quiescent Current: 17 mA · Single-Supply Operation · Supply Voltage: 1.8 V to 5.5 V · Rail-to-Rail Input/Output · MicroSize Packages: SC70 and SOT23 APPLICATIONS · Transducer Applications · Temperature Mea

1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIERS ZERO-DRIFT SERIES

文件：575.87 Kbytes Page：19 Pages

High Speed Switching Application

High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

丝印代码：E3***；P-Channel 12-V (D-S) MOSFET

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