OPA2333-HT 1.8-V Micropower CMOS Operational Amplifier Zero-Drift Series

1 Features 1• Low Offset Voltage: 26 μV (Maximum) • 0.01-Hz to 10-Hz Noise: 1.5 μVPP • Quiescent Current: 50 μA • Single-Supply Operation • Supply Voltage: 1.8 V to 5.5 V • Rail-to-Rail Input and Output • Supports Extreme Temperature Applications • Controlled Baseline • One Assembly/Test

高温 1.8V 微功耗 CMOS 运算放大器零漂移系列

The OPA2333 series of CMOS operational amplifiers uses a proprietary auto-calibration technique to simultaneously provide very low offset voltage and near-zero drift over time and temperature\n\n. These miniature, high-precision, low-quiescent-current amplifiers offer high-impedance inputs that have • Low Offset Voltage: 26 µV (Maximum)\n• 0.01-Hz to 10-Hz Noise: 1.5 µVPP \n• Quiescent Current: 50 µA\n• Single-Supply Operation\n• Supply Voltage: 1.8 V to 5.5 V\n• Rail-to-Rail Input and Output\n• Supports Extreme Temperature Applications\n• Controlled Baseline\n• One Assembly/Test Site\n• One Fa;

1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES

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1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES

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High Speed Switching Application

High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

丝印代码：E3***；P-Channel 12-V (D-S) MOSFET

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