NPN Silicon Phototransistors

NPN Silicon Phototransistors

Description Features

NPN Phototransistor

Features: • TO-18 hermetically sealed package • Mechanically and spectrally matched to OP130 and OP230 LEDs • TX and TXV process available (see Hi-Rel section) • Choice of narrow or wide receiving angle • Variety of sensitivity ranges • Enhanced temperature range Description: Each device i

Phototransistor

•TO-18 hermetically sealed package\n• Mechanically and spectrally matched to OP130 and OP230 LEDs\n• TX and TXV process available\n• Choice of narrow or wide receiving angle\n• Variety of sensitivity ranges\n• Enhanced temperature range;

Phototransistor

•TO-18 hermetically sealed package\n• Lensed for high sensitivity\n• Narrow acceptance angle\n• Processed after MIL-PRF-19500\n• Mechanically and spectrally matched to high reliability IREDs;

Hi-Reliability NPN Sil icon Phototransistor

Hi-Reliability NPN Sil icon Phototransistor

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：卷带（TR） 描述：SENSOR PHOTO 890NM TOP TO206AA 传感器，变送器 光学传感器 - 光电晶体管

High Reliability NPN Silicon Phototransistor

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High Reliability NPN Silicon Phototransistor

文件：180.54 Kbytes Page：2 Pages

High Reliability NPN Silicon Phototransistor

文件：579.11 Kbytes Page：2 Pages

High Reliability NPN Silicon Phototransistor

文件：180.54 Kbytes Page：2 Pages

Phototransistor

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：卷带（TR） 描述：SENSOR PHOTO 890NM TOP TO206AA 传感器，变送器 光学传感器 - 光电晶体管

Silicon MOS IC

Silicon MOS IC ■Features ●Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ●Oscillation circuit is incorporated ●EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p

SCR?셲

Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes)

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