NPN SILICON PHOTODARLINGTON

Description Each OP535 consist of an NPN silicon photodarlington molded in a green plastic package. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with OPtek GaAs and GaAlAs emitters. Photodarlingt

NPN Silicon Phototransistor

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封装/外壳：T-1 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR PHOTO 935NM TOP VIEW T1 传感器，变送器 光学传感器 - 光电晶体管

Phototransistor

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD533, BD535, and BD537 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are BD534, BD536, and BD538 respectively. ■ BD534, BD535, BD536, BD537 AND BD5

5300 pixel X 3 line CCD Linear Sensor (Color)

Description The ILX535K is a reduction type CCD linear sensor developed for color image scanner. The distance between lines is only 4 line (32µm). This sensor reads A4-size documents at a density of 600DPI. Features • Number of effective pixels: 15900 pixels(5300 pixels ×3) • Pixe

5300 pixel X 3 line CCD Linear Sensor (Color)

Description The ILX535K is a reduction type CCD linear sensor developed for color image scanner. The distance between lines is only 4 line (32µm). This sensor reads A4-size documents at a density of 600DPI. Features • Number of effective pixels: 15900 pixels(5300 pixels ×3) • Pixe

Thermopile Detector

The TPS 535 thermopile sensor in TO 5 type housing employs a chip of 1.2 x 1.2 mm2 absorber size and a 30 kV thermistor as temperature reference. The square window opening is equipped with a 5.5 mm longpass (standard) infrared filter. The sensor shows a flat sensitivity characteristics over the wa

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 350 Volt VDS * RDS(on)=40Ω