GaAlAs Hermetic Infrared Emitting Diodes

Description: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO-46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233,

Hermetic Infrared Emitting Diode

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Hermetic Infrared Emitting Diode

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Hermetic Infrared Emitting Diode

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封装/外壳：TO-46-2，金属罐 包装：散装 描述：EMITTER IR 850NM 100MA TO46 光电器件 LED 发射器 - 红外，紫外，可见光

NPN video transistor

DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buf

NPN video transistor

DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buf

Silicon NPN Transistor Final RF Power Output

Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

Precision Temperature Sensors

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Precision Temperature Sensors

文件：291.37 Kbytes Page：14 Pages