GaAlAs Hermetic Infrared Emitting Diodes

Description: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO-46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233,

Hermetic Infrared Emitting Diode

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Hermetic Infrared Emitting Diode

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Hermetic Infrared Emitting Diode

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封装/外壳：TO-46-2，金属罐 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 850NM 100MA TO46 光电器件 LED 发射器 - 红外，紫外，可见光

SILICON PNP TRANSISTOR

DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPE ■ PNP TRANSISTOR

THREE TERMINAL ADJUSTABLE CURRENT SOURCES

Description The LM134/LM234/LM334 are 3-terminal adjustable current sources characterized by: ■ an operating current range of 10000: 1 ■ an excellent current regulation ■ a wide dynamic voltage range of 1V t 10V The current is determined by an external resistor without requiring oth

THREE TERMINAL ADJUSTABLE CURRENT SOURCES

Description The LM134/LM234/LM334 are 3-terminal adjustable current sources characterized by: ■ an operating current range of 10000: 1 ■ an excellent current regulation ■ a wide dynamic voltage range of 1V t 10V The current is determined by an external resistor without requiring oth

Silicon PNP Transistor Low Noise, High Gain Amplifier

Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu ration voltage, tight beta control, and excellent low noise characteristics

3-Terminal Adjustable Current Sources

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