GAAS HERMETIC INFRARED EMITTING DIODES

Description Each OP123 and OP124 series are high intensity gallium arsenide infrared emiƫng diodes mounted in miniature Pill type hermetically sealed packages. This package style is intended for direct mounting to PC boards. Features • Hermetically sealed package • Enhanced temperature range

Hermetic Infrared Emitting Diode

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Hermetic Infrared Emitting Diode

文件：396.4 Kbytes Page：4 Pages

Hermetic Infrared Emitting Diode

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封装/外壳：微型粒状 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 935NM 100MA MINI-PILL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

插拔式接线端子

包装：散装 描述：TERM BLOCK HDR 12POS VERT 3.81MM 连接器，互连器件 针座、插头和插座

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

Silicon NPN Transistor High Voltage Power Output

Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switch ing, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features:

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC124EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

丝印代码：-05；PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC124ET. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space