封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：MOSFET RF SOT23 TO-236AB 分立半导体产品 晶体管 - FET，MOSFET - 射频

MOSFET RF SOT23 TO-236AB

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : 99 Sn above can meet RoHS environment substance diective request

Voltage regulator diodes

Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. FEATURES • Total power dissipation : max. 500 mW • Tolerance series:±5 • Working voltage range : nom. 3.0 to 75 V

Silicon Epitaxial Planar Z-Diodes

Features ● Very sharp reverse characteristic ● Low reverse current level ● Available with tighter tolerances ● Very high stability ● Low noise Applications    Voltage stabilization