30 kRad - 100kRad RADIATION TOLERANT 7.5A, 5A, 3A, 1.5A LOW DROPOUT POSITIVE ADJUSTABLE REGULATORS

DESCRIPTION These three terminal positive adjustable voltage regulators are designed to provide 7.5A, 5A, 3A, and 1.5A with higher efficiency than conventional voltage regulators. The devices are designed to operate to 1 Volt input to output differential and the dropout voltage is specified as

30 kRad - 100kRad RADIATION TOLERANT 7.5A, 5A, 3A, 1.5A LOW DROPOUT POSITIVE ADJUSTABLE REGULATORS

DESCRIPTION These three terminal positive adjustable voltage regulators are designed to provide 7.5A, 5A, 3A, and 1.5A with higher efficiency than conventional voltage regulators. The devices are designed to operate to 1 Volt input to output differential and the dropout voltage is specified as

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA