HERMETIC JEDEC TO-257AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER

[Omnirel] DESCRIPTION This series of products in a hermetic package is specifically designed for use at power switching frequencies in excess of 100 kHz. The series combines two high efficiency devices into one package, simplifying installation, reducing heat sink hardware, and the need to obtai

HERMETIC JEDEC TO-257AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER

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Q-Band 4-Stage Driver Amplifier

DESCRIPTION The MGFC5216 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Middle Power Amplifier (MPA) . FEATURES ● RF frequency : 37.0 to 43.0 GHz ● Linear gain : 20dB (TYP.)@ 37 to 40 GHz 20 dB(TYP.) @ 40 to 43 GHz ● P1dB : ³ 16 dBm(min.) @ 37 to 40 GHz ³ 16 dBm(target) @ 40

Dual Bias Resistor Trasnsistors

Dual Bias Resistor Trasnsistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digit

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

Smart Quad Channel Low-Side Switch

Features • Overload protection • Short circuit protection • Cascadeable serial diagnostic interface • Overvoltage protection • µC compatible input • Electrostatic discharge (ESD) protection Application • All kinds of resistive and inductive loads (relays, electromagnetic valves) • µC comp

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing