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TEA2208T_V01中文资料
TEA2208T_V01数据手册规格书PDF详情
General description
The TEA2208T is the first product of a new generation of active bridge rectifier controllers
replacing the traditional diode bridge.
Using the TEA2208T with low-ohmic high-voltage external MOSFETs significantly
improves the efficiency of the power converter as the typical rectifier diode-forward
conduction losses are eliminated. Efficiency can improve up to about 1.4 at 90 V (AC)
mains voltage.
The TEA2208T is designed in a silicon-on insulator (SOI) process.
Features and benefits
Efficiency features
• Forward conduction losses of the diode rectifier bridge are eliminated
• Very low IC power consumption (2 mW).
Application features
• Integrated high-voltage level shifters
• Directly drives all four rectifier MOSFETs
• Very low external part count
• Integrated X-capacitor discharge (2 mA)
• Self-supplying
• Full-wave drive improving total harmonic distortion (THD)
• S014 package
Control features
• Undervoltage lockout (UVLO) for high-side and low-side drivers
• Drain-source overvoltage protection for all external power MOSFETs
• Gate pull-down currents at start-up for all external power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP |
22+ |
N/A |
2500 |
进口原装,优势现货 |
|||
NXP |
22+ |
SMD |
2500 |
||||
NXP |
ROHS环保 |
SOP16 |
3862 |
原装正品,支持实单 |
|||
NXP(恩智浦) |
24+ |
SO16 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
NXP -恩智浦 /供应 |
23+ |
NA |
50000 |
代理元器件优质供应/全新现货/长期供应 |
|||
NXP USA Inc |
23+/24+ |
16-SOIC |
8600 |
只供原装进口公司现货+可订货 |
|||
NXP USA Inc. |
25+ |
16-SOIC(0.154 3.90mm 宽) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
NXP/恩智浦 |
2025+ |
57945 |
|||||
Surge |
23+ |
TO-18 |
12800 |
原装正品代理商最优惠价格,现货或订货 |
|||
ST |
23+ |
DIP |
8795 |
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- TEA2208T1
- TEA2209T
- TEA2209T1
- TEA2261/0
- TLC372M
Datasheet数据表PDF页码索引
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