General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits

■ Low conduction losses due to low on-state resistance

■ Simple gate drive required due to low gate charge

■ Suitable for logic level gate drive sources

Applications

■ DC-to-DC convertors