General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits

„Low conduction losses due to low on-state resistance

„Suitable for logic level gate drive sources

Applications

„DC-to-DC convertors

„General purpose power switching

„Motors, lamps and solenoids

„Portable equipment