General description

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits

■ Low conduction losses due to low

on-state resistance

■ Saves PCB space due to small

footprint

■ Simple gate drive required due to low

gate charge

■ Suitable for logic level gate drive

sources

Applications

■ Computer motherboards

■ DC-to-DC convertors

■ Notebook computers

■ Switched-mode power supplies