General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits

■ Low conduction losses due to low

on-state resistance

■ Suitable for logic level gate drive

sources

■ Suitable for thermally demanding

environments due to 175 °C rating

Applications

■ 12 V and 24 V loads

■ DC-to-DC convertors

■ General purpose power switching

■ Motors, lamps and solenoids