General description

PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package.

NPN complement: PBSS4160V.

Features

■ Low collector-emitter saturation voltage VCEsat

■ High collector current capability IC and ICM

■ High efficiency leading to less heat generation

■ Reduces printed-circuit board area required

■ Cost effective replacement for medium power transistors BCP52 and BCX52

Applications

■ Major application segments

◆ Automotive

◆ Telecom infrastructure

◆ Industrial

■ Power management

◆ DC-to-DC conversion

◆ Supply line switching

■ Peripheral driver

◆ Driver in low supply voltage applications (e.g. lamps and LEDs)

◆ Inductive load driver (e.g. relays, buzzers and motors)