General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Features

■ Low collector-emitter saturation voltage VCEsat

■ High collector current capability IC and ICM

■ High collector current gain (hFE) at high IC

■ High efficiency due to less heat generation

Applications

■ General-purpose switching and muting

■ LCD backlighting

■ Supply line switching circuits

■ Battery-driven equipment (mobile phones, video cameras and handheld devices)