General description

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS5420D.

Features

■ Very low collector-emitter saturation resistance

■ Ultra low collector-emitter saturation voltage

■ 4 A continuous collector current

■ Up to 15 A peak current

■ High efficiency due to less heat generation

Applications

■ Power management functions

■ Charging circuits

■ DC-to-DC conversion

■ MOSFET gate driving

■ Power switches (e.g. motors, fans)

■ Thin Film Transistor (TFT) backlight inverter