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PBSS4112PAN中文资料
PBSS4112PAN数据手册规格书PDF详情
General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.
Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
PBSS4112PAN产品属性
- 类型
描述
- 型号
PBSS4112PAN
- 功能描述
两极晶体管 - BJT 120V 1A NPN/NPN lo VCEsat transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
DFN |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
恩XP |
24+ |
QFN |
60000 |
全新原装现货 |
|||
恩XP |
25 |
LQFP32 |
6000 |
原装正品 |
|||
恩XP |
2023+ |
LQFP32 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
恩XP |
23+ |
LQFP32 |
12700 |
买原装认准中赛美 |
|||
恩XP |
24+ |
SOT-223 |
30000 |
原装正品公司现货,假一赔十! |
|||
恩XP |
24+ |
LQFP32 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
恩XP |
21+ |
SOT-223 |
8080 |
只做原装,质量保证 |
|||
恩XP |
25+ |
SOT-223 |
8880 |
原装认准芯泽盛世！ |
|||
恩XP |
23+ |
SOT-223 |
8080 |
原装正品，支持实单 |
PBSS4112PANP,115 价格
参考价格：￥1.1497
PBSS4112PAN 资料下载更多...
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NXP相关芯片制造商
Datasheet数据表PDF页码索引
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- P102
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