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PBSS4112PAN中文资料
PBSS4112PAN数据手册规格书PDF详情
General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.
Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
PBSS4112PAN产品属性
- 类型
描述
- 型号
PBSS4112PAN
- 功能描述
两极晶体管 - BJT 120V 1A NPN/NPN lo VCEsat transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
DFN |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
恩XP |
21+ |
6000 |
只做原装正品,卖元器件不赚钱交个朋友 |
||||
恩XP |
24+ |
DFN2020-6 |
42000 |
只做原装进口现货 |
|||
恩XP |
24+ |
N/A |
6000 |
现货 |
|||
恩XP |
25+ |
N/A |
8800 |
公司只做原装,详情请咨询 |
|||
恩XP |
25+ |
N/A |
6000 |
原装，请咨询 |
|||
恩XP |
24+ |
SOT-223 |
10000 |
十年沉淀唯有原装 |
|||
恩XP |
24+ |
N/A |
16000 |
原装正品现货支持实单 |
|||
恩XP |
2511 |
N/A |
6000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
PBSS4112PANP,115 价格
参考价格：￥1.1497
PBSS4112PAN 资料下载更多...
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Datasheet数据表PDF页码索引
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