General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS306NX.

Features

■ Low collector-emitter saturation voltage VCEsat

■ High collector current capability IC and ICM

■ High collector current gain (hFE) at high IC

■ High efficiency due to less heat generation

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

■ High-voltage DC-to-DC conversion

■ High-voltage MOSFET gate driving

■ High-voltage motor control

■ High-voltage power switches (e.g. motors, fans)

■ Thin Film Transistor (TFT) backlight inverter

■ Automotive applications