General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS302ND.

Features

■ Ultra low collector-emitter saturation voltage VCEsat

■ 4 A continuous collector current capability IC

■ Up to 15 A peak current

■ Very low collector-emitter saturation resistance

■ High efficiency due to less heat generation

Applications

■ Power management functions

■ Charging circuits

■ DC-to-DC conversion

■ MOSFET gate driving

■ Power switches (e.g. motors, fans)

■ Thin Film Transistor (TFT) backlight inverter