450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

• Typical Two-Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP

Power Gain — 18 dB

Drain Efficiency — 32

IMD — -37 dBc

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• On-Chip RF Feedback for Broadband Stability

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.