RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies from 750 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =

2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01 Probability

on CCDF.

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output

Power (3 dB Input Overdrive from Rated Pout), Designed for

Enhanced Ruggedness

• Typical Pout @ 1 dB Compression Point ≃ 340 Watts CW

Features

• 100 PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• Designed for Digital Predistortion Error Correction Systems

• Optimized for Doherty Applications

• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.