位置:MRF7S35120HS > MRF7S35120HS详情

MRF7S35120HS中文资料

厂家型号

MRF7S35120HS

文件大小

777.56Kbytes

页面数量

11

功能描述

RF Power Field Effect Transistor

射频MOSFET电源晶体管 HV7 120W PULSED

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

恩XP

MRF7S35120HS数据手册规格书PDF详情

Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

• Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA,

Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz,

Pulse Width = 100 μsec, Duty Cycle = 20

Power Gain — 12 dB

Drain Efficiency — 40

Rise Time — 6 ns

Fall Time — 6 ns

• Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA,

Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts,

7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01

Probability on CCDF

Power Gain — 13 dB

Drain Efficiency — 16

RCE — --33 dB (EVM — 2.2 rms)

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak

Power

• Capable of Handling 3 dB Overdrive @ 32 Vdc

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF7S35120HS产品属性

  • 类型

    描述

  • 型号

    MRF7S35120HS

  • 功能描述

    射频MOSFET电源晶体管 HV7 120W PULSED

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2025-10-11 15:01:00
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