1 General description

These RF power transistors are designed for applications operating at frequencies between 960 and 1215 MHz

such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These

devices are suitable for use in pulse applications, including Mode S ELM.

2 Features and benefits

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified up to a Maximum of 50 VDD Operation

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C Operation