General description

The MC33HB2002 is a SMARTMOS monolithic H-Bridge Power IC, enhanced with SPI

configurability and diagnostic capabilities. It is designed primarily for DC motor or servo

motor control applications within the specified current and voltage limits.

The MC33HB2002 is similar to the MC33HB2000 device with higher overtemperature

setting and the use of current foldback for current limiting to extend fault operation range.

The MC33HB2002 is able to control inductive loads with peak currents greater than 10 A.

The nominal continuous average load current is 3.0 A. A current mirror output provides

an analog feedback signal proportional to the load current.

This part is designed to specifically address the ISO 26262 safety requirements. It meets

the stringent requirements of automotive applications and is fully AEC-Q100 grade 1

qualified.

Features and benefits

• Advanced diagnostic reporting via a serial peripheral interface (SPI): charge pump

undervoltage, overvoltage, and undervoltage on VPWR, short to ground and short

to VPWR for each output, open load, temperature warning and overtemperature

shutdown

• Thermal management: Excellent thermal resistance of <1.0 °C/W between junction and case (exposed pad)

• Eight selectable slew rates via the SPI: 0.25 V/μs to more than 16 V/μs for EMI and

thermal performance optimization

• Four selectable current limits via the SPI: 5.4/7.0/8.8/10.7 A covering a wide range of

applications

• Extended high temperature operating range with current foldback while limiting the

current

• Small footprint HVQFN 6x6mm package

• Can be operated without SPI with default slew rate of 2.0 V/μs and a 7.0 A current limit

threshold

• Highly accurate real-time current feedback through a current mirror output signal with

less than 5.0 error

• Drives inductive loads in a full H-bridge or Half-bridge configuration

• Overvoltage protection places the load in high-side recirculation (braking) mode with

notification in H-bridge mode

• Wide operating range: 5.0 V to 28 V operation

• Low RDS(on) integrated MOSFETs: Maximum of 235 mΩ (TJ = 150 °C) for each

MOSFET

• Internal protection for overtemperature, undervoltage, and short-circuit by signaling the error condition and disabling the outputs

• I/O pins can withstand up to 36 V

• AEC-Q100 grade 1 qualified

Applications

• Electronic throttle control

• Exhaust gas recirculation control (EGR)

• Turbo, swirl and whirl and waste flap control

• Electric pumps, motor control and auxiliaries