General description

CBTV24DD12A is designed for 1.8 V/2.5 V/3.3 V supply voltage operation and it supports

Pseudo Open Drain (POD), SSTL_12, SSTL_15 or SSTL_18 signaling and CMOS select

input levels. This device is designed for operation in DDR4, DDR3 or DDR2 memory bus

systems, with speeds up to 3200 MT/s.

The CBTV24DD12A has a 1 : 2 switch or 2 : 1 multiplex topology and offers a 12-bit wide

bus. Each 12-bit wide A-port can be switched to one of two ports B and C, for all bits

simultaneously. Each port is non-directional due to the use of FET switches, allowing a

multitude of applications requiring high-bandwidth switching or multiplexing.

The selection of the port is by a simple CMOS input (SELect). Another CMOS input

(ENable) is available to allow all ports to be disconnected. The SEL0, SEL1 and EN input

signals are designed to operate transparently as CMOS input level signals up to 3.3 V.

CBTV24DD12A uses NXP’s proprietary high-speed switch architecture providing high

bandwidth, very little insertion loss, return loss, and very low propagation delay, allowing

use in many applications requiring switching or multiplexing of high-speed signals. It is

available in a 3.0 mm  8.0 mm TFBGA48 package with 0.65 mm ball pitch, for optimal

size versus board layout density considerations. It is characterized for operation from

10 C to +85 C.

Features and benefits

2.1 Topology

 12-bit bus width

 1 : 2 switch/MUX topology

 Bidirectional operation

 Simple CMOS select pins (SEL0, SEL1)

 Simple CMOS enable pin (EN)

2.2 Performance

 3200 MT/s throughput

 7.4 GHz bandwidth (for both single-ended and differential signals)

 Low ON insertion loss

 Low return loss

 Low crosstalk

 High OFF isolation

 POD_12, SSTL_12, SSTL_15 or SSTL_18 signaling

 Low RON (8  typical)

 Low RON (<1 )

2.3 General attributes

 1.8 V/2.5 V/3.3 V supply voltage operation

 Very low supply current (600 A typical)

 Back current protection on all the I/O pins of these switches

 ESD robustness exceeds 2.5 kV HBM, 1 kV CDM

 Available in TFBGA48 package, 3.0 mm  8.0 mm  1 mm size, 0.65 mm pitch,

Pb-free/Dark Green

Applications

 DDR4/DDR3/DDR2 memory bus systems

 NVDIMM module

 Systems requiring high-speed multiplexing

 Flash memory array subsystem