General description

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Features and benefits

■ Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage

of 32 V, an IDq of 50 mA, a tp of 300 μs and a δ of 10 :

◆ Output power = 20 W

◆ Power gain = 15.5 dB

◆ Efficiency = 45

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (3.1 GHz to 3.5 GHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency

range