General description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Features and benefits

■ Easy power control

■ Integrated ESD protection

■ High flexibility with respect to pulse formats

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (0.5 GHz to 1.4 GHz)

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range