General description

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz

Features and benefits

■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,

a supply voltage of 28 V and an IDq of 100 mA:

◆ Average output power = 0.7 W

◆ Gain = 18.5 dB

◆ Efficiency = 15

◆ ACPR = 50 dBc

■ Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,

a supply voltage of 28 V and an IDq of 100 mA:

◆ Average output power = 2 W

◆ Gain = 19.3 dB

◆ Efficiency = 31

◆ ACPR = 39 dBc

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ No internal matching for broadband operation

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and

multi carrier applications in the HF to 2200 MHz frequency range

■ Broadcast drivers