General description

A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.

Features

■ Typical pulsed performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A:

◆ Load power PL = 500 W

◆ Power gain Gp = 19 dB

◆ Drain efficiency ηD = 55

■ Advanced flange material for optimum thermal behavior and reliability

■ Excellent ruggedness

■ High power gain

■ Designed for broadband operation (HF/VHF band)

■ Source on underside eliminates DC isolators, reducing common-mode inductance

■ Easy power control

■ Integrated ESD protection

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS), using exemption No. 7 of the annex

Applications

■ Pulsed applications up to 500 MHz

■ Communication transmitter applications in the HF/VHF/UHF band under specific conditions

■ Industrial applications up to 500 MHz under special conditions