General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features and benefits

■ Low noise high linearity RF transistor

■ High maximum output third-order intercept point 32 dBm at 1.8 GHz

■ 110 GHz fT silicon germanium technology

Applications

■ Ka band oscillators DRO’s

■ High linearity applications

■ Medium output power applications

■ Wi-Fi / WLAN / WiMAX

■ GPS

■ ZigBee

■ SDARS first stage LNA

■ LTE, cellular, UMTS