General description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter

SOT143B package.

The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium

power applications up to 2 GHz.

Features and benefits

• Low noise, high breakdown RF transistor

• AEC-Q101 qualified

• Minimum noise figure (NFmin) = 0.7 dB at 900 MHz

• Maximum stable gain 21 dB at 900 MHz

• 11 GHz fT silicon technology

Applications

• Applications requiring high supply voltages and high breakdown voltages

• Broadband amplifiers up to 2 GHz

• Low noise amplifiers for ISM applications

• ISM band oscillators