General description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.

The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

Features and benefits

■ Low noise, high breakdown RF transistor

■ AEC-Q101 qualified

■ Minimum noise figure (NFmin) = 0.7 dB at 900 MHz

■ Maximum stable gain 21.5 dB at 900 MHz

Applications

■ Applications requiring high supply voltages and high breakdown voltages

■ Broadband amplifiers up to 2 GHz

■ Low noise amplifiers for ISM applications

■ ISM band oscillators