DESCRIPTION

NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range,

such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.