FEATURES

· Low current consumption

(100 mA to 1 mA)

· Low noise figure

· Gold metallization ensures

excellent reliability.

APPLICATIONS

· RF low power amplifiers, such as

pocket telephones, paging

systems, with signal frequencies

up to 2 GHz.

DESCRIPTION

NPN silicon wideband transistor in a

four-lead dual emitter SOT143B

plastic package (cross emitter).