FEATURES

 Specially designed for use at 9 to 12 V supply voltage

 Short channel transistor with high forward transfer

admittance to input capacitance ratio

 Low noise gain controlled amplifier up to 1 GHz

 Superior cross-modulation performance during AGC.

APPLICATIONS

 VHF and UHF applications such as television tuners and

professional communications equipment.

DESCRIPTION

Enhancement type field-effect transistor in a plastic

microminiature SOT343R package. The transistor

consists of an amplifier MOS-FET with source and

substrate interconnected and an internal bias circuit to

ensure good cross-modulation performance during AGC.