DESCRIPTION

NPN double transistor in a SOT666 plastic package.

PNP complement: BC857BV.

FEATURES

• 300 mW total power dissipation

• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package

• Excellent coplanarity due to straight leads

• Low collector capacitance

• Improved thermal behaviour due to flat leads

• Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors

• Reduces required board space

• Reduces pick and place costs.

APPLICATIONS

• General purpose switching and amplification.