N--Channel Enhancement--Mode Lateral MOSFETs

These 50 W RF power LDMOS transistors are designed for cellular

base station applications covering the frequency range of 2110 to 2170 MHz.

 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA,

Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01 Probability on CCDF.

Features

 Greater Negative Gate--Source Voltage Range for Improved Class C Operation

 Designed for Digital Predistortion Error Correction Systems

 Optimized for Doherty Applications

 NI--780S--2L2L, NI--780S--2L4S: R3 Suffix = 250 Units, 44 mm Tape Width,

13--inch Reel.

 NI--780S--2L: R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.

For R5 Tape and Reel options, see p. 17.