N--Channel Enhancement--Mode Lateral MOSFET

This 38 W RF power LDMOS transistor is designed for cellular base station

applications requiring very wide instantaneous bandwidth capability covering

the frequency range of 1805 to 1995 MHz.

Features

 Designed for wide instantaneous bandwidth applications

 Greater negative gate--source voltage range for improved Class C operation

 Able to withstand extremely high output VSWR and broadband operating

conditions

 Optimized for Doherty applications