General description

The 74LVC1G10 provides a low-power, low-voltage single 3-input NAND gate. The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall

time. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

Features

■ Wide supply voltage range from 1.65 V to 5.5 V

■ High noise immunity

■ Complies with JEDEC standard:

◆ JESD8-7 (1.65 V to 1.95 V)

◆ JESD8-5 (2.3 V to 2.7 V)

◆ JESD8-B/JESD36 (2.7 V to 3.6 V).

■ ±24 mA output drive (VCC = 3.0 V)

■ CMOS low power consumption

■ Latch-up performance exceeds 250 mA

■ Direct interface with TTL levels

■ Inputs accept voltages up to 5 V

■ ESD protection:

◆ HBM JESD22-A114E exceeds 2000 V

◆ MM JESD22-A115-A exceeds 200 V

◆ CDM JESD22-C101-C exceeds 1000 V

■ Multiple package options

■ Specified from −40 °C to +85 °C and −40 °C to +125 °C